Round 1(technical): Basic MOSFET device characteristics, questions more focused on fabrication side- structure; doping, implant, PVD/CVD, STI, LDD
Round 2(technical): Questions were specific to MOS capacitor circuit, equations, CV characteristics,

Question

Round 1(technical): Basic MOSFET device characteristics, questions more focused on fabrication side- structure; doping, implant, PVD/CVD, STI, LDD
Round 2(technical): Questions were specific to MOS capacitor circuit, equations, CV characteristics,

Anonymous · Accepted Answer

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Analog Devices

Analog Devices Interview Question

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